PART |
Description |
Maker |
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM400DY-66H |
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
BU4069F BU4069FV BU4069UB-E2 BU4069UBF-E2 BU4069UB |
4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDSO14 High Voltage CMOS Logic ICs High Voltage CMOS Logic ICs Gate
|
http:// Rohm
|
AP20GT60ASP-HF AP20GT60ASP-HF14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Speed Switching
|
Advanced Power Electronics Corp.
|
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
AP28G40GEM-HF AP28G40GEM-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Peak Current Capability
|
Advanced Power Electronics Corp. Advanced Power Electronics ...
|
AP30G120CSW-HF AP30G120CSW-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD High Speed Switching
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
NTE3303 NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|